Lift up hole RF breakdown

1. Lift up hole RF breakdown

FOI
Plasma R&D
Lift up hole RF breakdown
SE-4000 Experimental
2006.06.27 ~ 2006.07.14 Old type cathode block was checked
by high RF voltage bias (up to 8200 Vp-p)
Cathode: N4X05 - 2310
Standard connection was used in this experiments:
RF power - to base electrode,
DC high voltage – to ESC was applied.

2.

3.

After experiment ESC surface has no damage, although many gas hole low power breakdowns occurred

4.

Under cathode parts has no damage too.

5.

But one lift up hole and lift up pin has traces
of RF capacitive discharge

6.

Cathode bottom surface around this lift up hole
has traces of RF capacitive discharge too.
Surface after discharge
Clean surface
Surface after discharge

7.

wafer
RF
ceramics
Cathode
Al
Al2O3
Quartz
PI
Position of capacitive discharge
inside lift up hole
Al2O3
V.Menagarishvili
2006/07/24
GND
Al